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Fuzzy logic approaches to the analysis of HREM images of III-V compounds

机译:模糊逻辑方法分析III-V类化合物的HREM图像

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摘要

It is known that high-resolution electron microscopy (HREM) can provide quantitative information on the properties of crystalline materials. The HREM patterns of layered structures of III-V semiconductors vary with the chemical composition of the latter within the sublattices, which is also influenced by interdiffusion, Local variations of the crystal cell similarity are recorded for image analysis and compared with templates of known material composition, Of the advanced theories of data interpretation, the now well-established fuzzy logic is highly suited for corresponding image processing techniques, Combining neighbouring image cell similarities, the underlying chemical composition is evaluated by applying fuzzy logic criteria of inference to masks of about 1 nm x 1 nm in size. The new approach can be used to localize regions of significant changes in composition, i.e. edge detection, and to determine the composition across the interface region, The methods introduced prove successfully applicable to simulated as well as to experimental images of AlAs/AlxGa1-xAs. Similarity/composition relations of nonlinear as well as nonmonotonic characteristics are studied to establish an alternative fuzzy logic approach. [References: 27]
机译:众所周知,高分辨率电子显微镜(HREM)可以提供有关晶体材料特性的定量信息。 III-V半导体层状结构的HREM图案随亚晶格内后者的化学成分而变化,这也受到互扩散的影响,记录晶胞相似性的局部变化以进行图像分析,并与已知材料成分的模板进行比较在先进的数据解释理论中,现已建立的模糊逻辑非常适合于相应的图像处理技术,结合相邻图像单元的相似性,通过对约1 nm的掩模应用推理的模糊逻辑准则来评估基础化学成分x 1纳米该新方法可用于定位组成发生重大变化的区域,即边缘检测,并确定整个界面区域的组成。所介绍的方法已成功地应用于AlAs / AlxGa1-xAs的模拟图像和实验图像。研究了非线性和非单调特征的相似性/组成关系,以建立替代的模糊逻辑方法。 [参考:27]

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