Characterization of CdTe thin films fabricated by close spaced sublimation technique and a study of Cu doping by ion exchange process

摘要

CdTe thin films were prepared onto water-white glass substrates by the close spaced sublimation technique. The films annealed right after the deposition were then immersed in copper nitrate solution for different periods of time. These films were again annealed at 500 degrees C for 1 h to ensure the diffusion of copper in the films. The samples were characterized by X-ray diffraction and scanning electron microscopy. The electron microprobe analyzer showed an increase of copper-content in composition. The dc electrical conductivity showed a credible increase with increasing copper-content in the films. With the increase of copper-content, the hole mobility increased systematically. The optical parameters were deduced by fitting the optical transmittance in the wavelength range 300-2500 nm.