Nanoparticle formation in low-pressure silane plasmas: bridging the gap between a-Si : H and mu c-Si films

摘要

Detailed analysis of the structure of silicon films prepared under particular rf glow discharge conditions conclusively show that nanometer-size (similar to 2 nm) ordered regions can be present in the matrix of this disordered semiconductor. The obtaining of such a type of 'nanostructured' silicon films, referred to as polymorphous silicon in the following, under a wide range of plasma conditions, is attributed to the contribution of silicon 'nanoparticles' to the growth of the films. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 16]