Growth and characterization of electroplated copper selenide thin films

摘要

Copper Selenide thin films have been prepared on indium doped tin oxide coated conducting glass substrates from an aqueous electrolytic bath consists of CuSO_4 and SeO_2 using potentiostatic electrodeposition technique. Deposition mechanism has been analyzed using cyclic voltammetry. X-ray diffraction pattern showed that the prepared films possess polycrystalline nature with hexagonal structure. Film composition and surface morphology showed that films with smooth surface and better stoichiometry are obtained under optimized condition. Band gap value of the deposited films is determined using optical absorption measurements. Variation of film thickness with time and its dependency on structural, morphological, compositional and optical properties are investigated.