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Improved hole injection and performance of multilayer OLED devices via electrochemically prepared-polybithiophene layers

机译:通过电化学制备的聚二噻吩层改善空穴注入和多层OLED器件的性能

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摘要

Stable and neutral polybithiophene (PbT) thin layers with well-defined morphology and a high degree of smoothness have been prepared by electropolymerization of 2,2'-bithiophene. This semiconducting contact layer on an ITO anode improves remarkably hole injection between ITO and the naphthyl-substituted benzidine derivative (NPB) hole-transport layer. Vapor-deposited NPB/Alq(3) bilayer devices with the incorporated injection layer show a sharp reduction of the operating voltage (about 4 V), as well as an enhanced luminous efficiency and luminance, compared to the NPB/Alq(3) structure without a PbT layer. It is demonstrated that the use of an electropolymerization step in the production of vapor- deposited small molecular OLEDs is an alternative approach to improve the performance of OLEDs. [References: 18]
机译:通过2,2'-联噻吩的电聚合制备了稳定且中性的聚二噻吩(PbT)薄层,该薄层具有明确的形态和高度的光滑度。 ITO阳极上的这种半导体接触层显着改善了ITO和萘基取代的联苯胺衍生物(NPB)空穴传输层之间的空穴注入。与NPB / Alq(3)结构相比,具有注入层的气相沉积NPB / Alq(3)双层器件显示出工作电压(约4 V)的急剧降低,以及增强的发光效率和亮度没有PbT层。已经证明,在气相沉积的小分子OLED的生产中使用电聚合步骤是改善OLED性能的替代方法。 [参考:18]

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