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New selenophene-based semiconducting copolymers for high performance organic thin-film transistors

机译:用于高性能有机薄膜晶体管的新型硒硒基半导体共聚物

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摘要

A series of new selenophene-based organic semiconducting copolymers, poly(5,5'-bis(3-dodecylthiophen-2-yl)-2,2'-biselenophene) (PDT2Se2) and poly(5,5'-bis(4,4'-didodecyl-2,2'-bithiophen-5-yl)-2,2'-biselenophene) (PDT4Se2), were successfully synthesized by Stille and oxidative coupling reactions. Our aim was to investigate the effects of the selenophene units and inserted dodecylthiophenes on the optical and electrochemical properties of these copolymers, their intermolecular ordering in the film state, and hence their thin-film transistor (TFT) performance. X-ray-diffraction (GIXRD and XRD) and theoretical calculations for models of these polymers were used to show that PDT2Se2 films have well organized interlayer packing and π-π stacking, whereas the films of PDT4Se2, which contain regioregularly inserted additional dodecylthiophenes next to the repeat units of PDT2Se2, have a long-range amorphous structure. The TFT characteristics of these polymers are strongly dependent on the intermolecular ordering of the polymer chains. PDT2Se2 exhibited a high hole transporting mobility of 0.02 cm~2 V~(-1) s~(-1) due to its excellent intermolecular ordering, whereas PDT4Se2 exhibited a very poor mobility of 1.4 x 10~(-5) cm~2 V~(-4) s~(-1) due to its amorphous characteristics, which result from the repulsion between the additional dodecylthiophenes. These results confirm that it is important to consider intermolecular ordering in the design of semiconducting materials for high performance OTFTs.
机译:一系列新的硒基有机半导体共聚物,聚(5,5'-双(3-十二烷基噻吩-2-基)-2,2'-双硒苯)(PDT2Se2)和聚(5,5'-bis(4通过Stille和氧化偶联反应成功地合成了(4'-二十二烷基-2,2'-联噻吩-5-基)-2,2'-二苯并菲)(PDT4Se2)。我们的目的是研究硒烯单元和插入的十二烷基噻吩对这些共聚物的光学和电化学性能的影响,它们在薄膜状态下的分子间有序排列,以及因此而引起的薄膜晶体管(TFT)性能。 X射线衍射(GIXRD和XRD)以及这些聚合物模型的理论计算表明,PDT2Se2薄膜具有良好的层间堆积和π-π堆积,而PDT4Se2薄膜的区域规则地插入了旁边的附加十二烷基噻吩PDT2Se2的重复单元具有远程非晶结构。这些聚合物的TFT特性在很大程度上取决于聚合物链的分子间顺序。 PDT2Se2由于其极好的分子间有序性而具有0.02 cm〜2 V〜(-1)s〜(-1)的高空穴传输迁移率,而PDT4Se2却具有1.4 x 10〜(-5)cm〜2的非常差的迁移率。 V〜(-4)s〜(-1)由于其无定形特性,这是由于额外的十二烷基噻吩之间的排斥所致。这些结果证实,在用于高性能OTFT的半导体材料设计中,考虑分子间的有序性很重要。

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