首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >A simple spraying process greatly enhanced field emission of novel T-ZnO-supported CNT emitters
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A simple spraying process greatly enhanced field emission of novel T-ZnO-supported CNT emitters

机译:简单的喷涂工艺大大增强了新型T-ZnO负载的CNT发射器的场发射

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T-ZnO-supported CNT emitters were fabricated by using a simple process involving two spraying steps followed by heat treatment in air. The T-ZnO-supported CNT emitter was observed to form a particular architecture with the T-ZnO support containing a vertically aligned CNT emitter firmly attached to the electrode. These particular T-ZnO-supported carbon nanotube emitters displayed good contacts with the substrate, vertically aligned CNT emitters and density-controllable T-ZnO supports, which all appear to explain the excellent field emission performance of the electrode. Of the materials tested, the T-ZnO-supported CNT emitters exhibited the best field emission capability, i.e., the lowest turn-on electrical field, with a value of 0.96 V mu m(-1) at a current density of 0.01 mA cm(-2), and the highest field enhancement factor, with a value of 13 883, as well as good emission stability, with only similar to 18% of the current attenuated over an operating span of similar to 200 min. These characteristics indicate that the T-ZnO-supported CNT emitters constitute a very promising cathode material candidate for field emission.
机译:T-ZnO负载的CNT发射极是通过简单的工艺制造的,该工艺包括两个喷涂步骤,然后在空气中进行热处理。观察到T-ZnO支撑的CNT发射极形成了特定的结构,其中T-ZnO载体包含牢固固定在电极上的垂直排列的CNT发射极。这些特殊的T-ZnO支撑的碳纳米管发射器与基板,垂直排列的CNT发射器和密度可控的T-ZnO支撑体显示出良好的接触,这些似乎都可以解释电极的出色场发射性能。在测试的材料中,T-ZnO支撑的CNT发射器表现出最佳的场发射能力,即最低的导通电场,在0.01 mA cm的电流密度下的值为0.96 Vμm(-1)。 (-2),以及最高的场增强因子,具有13 883的值,以及良好的发射稳定性,在接近200分钟的工作时间范围内,只有接近18%的电流衰减。这些特征表明,T-ZnO负载的CNT发射极构成了非常有希望的用于场发射的阴极材料候选物。

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