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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Functionalizable and electrically conductive thin films formed by oxidative chemical vapor deposition (oCVD) from mixtures of 3-thiopheneethanol (3TE) and ethylene dioxythiophene (EDOT)
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Functionalizable and electrically conductive thin films formed by oxidative chemical vapor deposition (oCVD) from mixtures of 3-thiopheneethanol (3TE) and ethylene dioxythiophene (EDOT)

机译:通过氧化化学气相沉积(oCVD)由3-噻吩乙醇(3TE)和乙撑二氧噻吩(EDOT)的混合物形成的功能性导电薄膜

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摘要

Mixtures of 3-thiopheneethanol (3TE) and 3,4-ethylenedioxythiophene (EDOT) were used as the reactants for oxidative chemical vapor deposition (oCVD). Monomer (3TE : EDOT) feed ratios of (3 : 1), (3 : 2), (3 : 3), (2 : 3), and (1 : 3) were employed to obtain conductive polymer thin films with varying densities of hydroxyl pendant groups. The incorporation of both 3TE and EDOT units into the deposited films was confirmed by a combination of high resolution mass spectrometry, UV-visible-Near Infrared (UV-vis-NIR), and Fourier transform infrared (FTIR) spectroscopy, yielding conductive and -OH functionalized thin films. Theoretical analysis of the initial formation of dimers was studied by using density functional theory (DFT). The calculation predicts that the reaction of 3TE and EDOT is kinetically favored over the combination of two 3TE monomers. The pi-pi* transition observed at 425 nm in the UV-vis-NIR spectra of the 3TE polymerized film red shifts with increasing EDOT incorporation. This transition is observed at 523 nm in the film prepared using (1 : 3) a monomer feed ratio.
机译:3-噻吩乙醇(3TE)和3,4-乙撑二氧噻吩(EDOT)的混合物用作氧化化学气相沉积(oCVD)的反应物。采用(3:1),(3:2),(3:3),(2:3)和(1:3)的单体(3TE:EDOT)进料比来获得具有不同密度的导电聚合物薄膜羟基侧基。通过高分辨率质谱,紫外可见近红外(UV-vis-NIR)和傅立叶变换红外(FTIR)光谱的组合,证实了3TE和EDOT单元均已结合到沉积膜中,从而产生导电性和- OH功能化薄膜。通过使用密度泛函理论(DFT)研究了二聚体初始形成的理论分析。该计算预测3TE和EDOT的反应在动力学上优于两种3TE单体的组合。在3TE聚合膜的UV-vis-NIR光谱中,在425 nm处观察到的pi-pi *跃迁随着EDOT掺入量的增加而发生红移。在使用(1∶3)单体进料比制备的膜中在523nm处观察到该转变。

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