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High temperature spin-polarized semiconductivity with zero magnetization in two-dimensional Janus MXenes

机译:二维Janus MXenes中具有零磁化强度的高温自旋极化半导体

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Searching for two-dimensional (2D) materials with room-temperature magnetic order and high spin-polarization is essential for the development of next-generation nanospintronic devices. A new class of 2D magnetic materials with high Neel temperature, fully compensated antiferromagnetic order (zero magnetization) and completely spin-polarized semiconductivity is proposed for the first time. Based on the density functional theory calculations, we predict these properties for asymmetrically functionalized MXenes (Janus Cr2C) - Cr2CXX' (X, X' = H, F, Cl, Br, OH). The valence and conduction bands in these materials are made up of opposite spin channels and they can behave as bipolar magnetic semiconductors with zero magnetization. A Neel temperature as high as 400 K has been found for Cr2CFCl, Cr2CClBr, Cr2CHCl, Cr2CHF, and Cr2CFOH materials. Remarkably, the spin carrier orientation and induced transition from bipolar magnetic semiconductors to half-metal antiferromagnets can be easily controlled by electron or hole doping. The band gap of Janus MXenes can be effectively tuned by the selection of a pair of chemical elements/functional groups terminating the upper and the lower surfaces. The spin-polarized semiconductivity with zero magnetism is preserved when MXenes are put on the SiC(0001) support. The results presented herein open a new road towards the construction of 2D high-temperature spin-polarized materials with anti-ferromagnetism potentially suitable for spintronic applications.
机译:寻找具有室温磁序和高自旋极化的二维(2D)材料对于开发下一代纳米自旋电子器件至关重要。首次提出了一种新型的二维磁性材料,其具有高的尼尔温度,完全补偿的反铁磁阶数(零磁化强度)和完全自旋极化的半导电性。基于密度泛函理论计算,我们预测了不对称官能化的MXenes(Janus Cr2C)-Cr2CXX'(X,X'= H,F,Cl,Br,OH)的这些性质。这些材料中的价带和导带由相反的自旋通道组成,它们可以充当磁化强度为零的双极磁性半导体。对于Cr2CFCl,Cr2CClBr,Cr2CHCl,Cr2CHF和Cr2CFOH材料,发现Neel温度高达400K。值得注意的是,通过电子或空穴掺杂,可以很容易地控制自旋载流子的取向以及从双极磁性半导体到半金属反铁磁体的感应跃迁。 Janus MXenes的带隙可以通过选择终止上表面和下表面的一对化学元素/官能团进行有效调节。将MXenes放在SiC(0001)载体上时,将保留具有零磁性的自旋极化半导电性。本文介绍的结果为构造具有潜在适合自旋电子学应用的反铁磁性的2D高温自旋极化材料开辟了一条新道路。

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