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Micellar poly(styrene-b-4-vinylpyridine)-nanoparticle hybrid systemfor non-volatile organic transistor memory

机译:用于非易失性有机晶体管存储的胶束聚(苯乙烯-b-4-乙烯基吡啶)-纳米颗粒混合系统

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摘要

We present organic field-effect transistor (OFET) memories where in-situ synthesized gold (Au) nanoparticles in self-assembled polystyrene-block-poly-4-vinylpyridine (PS-b-P4VP) block copolymer nanodomains successfully functioned as charge storage elements. Both p-type (pentacene) and n-type (perfruorinated copper phthalocyanine) OFET based memories are reported, which have stable large charge capacity and programmable-erasable properties due to charge confinement in the embedded Au nanoparticles. Optical excitation has been utilized to demonstrate photogenerated minority carrier trapping in the Au nanoparticles for efficient erasing operations. The memory devices can hence be written and read electrically and erased optically, resulting in large memory windows (~9-l 1 V), high on/off ratio between memory states (10~3-10~5) and long retention times (>1000 s). The results clearly indicate the utility of the block copolymer-nanoparticle approach for OFET based memories.
机译:我们介绍了有机场效应晶体管(OFET)存储器,其中自组装的聚苯乙烯嵌段-聚-4-乙烯基吡啶(PS-b-P4VP)嵌段共聚物纳米域中的原位合成金(Au)纳米颗粒成功地用作电荷存储元件。基于p型(并五苯)和n型(全氟酞菁铜)的OFET存储器均已报道,由于嵌入的Au纳米粒子中的电荷限制,它们具有稳定的大电荷容量和可编程可擦除特性。光激发已被用来证明光生少数载流子捕获在Au纳米颗粒中以进行有效的擦除操作。因此,可以电读写存储设备并进行光学擦除,从而导致存储窗口大(〜9-1 V),存储状态之间的高开/关比(10〜3-10〜5)和长的保留时间( > 1000秒)。结果清楚地表明了嵌段共聚物-纳米颗粒方法在基于OFET的存储器中的实用性。

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