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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Effects of metal film thickness and gain on the coupling of organic semiconductor exciton emission to surface plasmon polaritons
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Effects of metal film thickness and gain on the coupling of organic semiconductor exciton emission to surface plasmon polaritons

机译:金属膜厚度和增益对有机半导体激子发射与表面等离激元极化子耦合的影响

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Control of near-field exciton emission coupling to surface plasmon polaritons (SPPs) is of importance for the development of efficient organic semiconductor thin-film light sources. Here, we experimentally investigate organic exciton emitter-SPP coupling in insulator-semiconductor-metal-insulator (ISMI) waveguides, containing an organic semiconducting (i.e., conjugated) polymer film on a range of Ag metal film thicknesses, as a function of optical excitation pump power and collection polarization. An increase in transverse-magnetic-polarized emission peak intensity is observed as a function of decreasing metal film thickness from ISMI waveguides at high excitation powers, suggesting more efficient emitter-SPP coupling for thinner Ag films when the polymer undergoes stimulated emission. Furthermore, emission dichroic ratio values (defined as the ratio of transverse electric to transverse magnetic polarized emission) increase when the polymer undergoes stimulated emission for thicker metal films but decrease below a certain metal film thickness. This indicates that gain in the semiconducting polymer film reduces the extent of exciton emission coupling to SPP modes for thicker metal films. However, once the metal thickness is below a critical value, gain improves exciton-SPP coupling. These results are consistent with theoretical calculations, which show that the dominant SPP mode exhibits a greater propagation length for thinner metal films, suggesting greater near-field overlap between the semiconductor film and SPP modes.
机译:控制与表面等离激元极化子(SPPs)耦合的近场激子发射对于开发有效的有机半导体薄膜光源非常重要。在这里,我们通过实验研究绝缘子-半导体-金属-绝缘体(ISMI)波导中的有机激子发射极-SPP耦合,其中包含有机半导体(即共轭)聚合物膜,该金属膜在一定范围的Ag金属膜厚度下作为光激发的函数泵浦功率和收集极化。在高激发功率下,观察到横向磁极化发射峰强度的增加与ISMI波导金属膜厚度的减小有关,这表明当聚合物经历受激发射时,对于较薄的Ag膜,发射器-SPP耦合效率更高。此外,当聚合物对较厚的金属膜进行受激发射时,发射二向色比值(定义为横向电极化与横向磁极化发射之比)增加,但在特定金属膜厚度以下降低。这表明半导体聚合物薄膜中的增益降低了激子发射耦合到SPP模式的程度,从而可用于较厚的金属薄膜。但是,一旦金属厚度低于临界值,增益就会提高激子-SPP耦合。这些结果与理论计算是一致的,理论计算表明,对于较薄的金属膜,主要的SPP模式表现出更大的传播长度,表明半导体膜和SPP模式之间的近场重叠更大。

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