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High performance MgB2 superconducting wires fabricated by improved internal Mg diffusion process at a low temperature

机译:通过改进的内部Mg扩散工艺在低温下制造的高性能MgB2超导线

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Internal Mg diffusion (IMD) process can produce MgB2 superconducting wires with engineering critical current density several times higher than that of traditional powder in tube processed wires, which makes it an attractive and promising method for the mass production of practical MgB2 wires. However, the MgB2 layer growth stops shortly after the onset of the heat treatment and unreacted B always remains in the MgB2 layer within MgB2 wires due to slow Mg diffusion, negatively affecting the J(e) performance. In the present study, to solve the problem of slow Mg diffusion and fabricate high performance MgB2 superconducting wires, a Cu coating technique was innovatively introduced into internal Mg diffusion (IMD) process. It was found that Cu coating first reacts with the Mg rod forming Mg-Cu liquid at a low temperature during heating process. This Mg-Cu liquid locally concentrates between Mg rod and B powder and can provide higher transport for the diffusion of Mg atoms into B. Consequently, Mg diffusion rate and distance can be increased significantly and the formation of MgB2 layer is accelerated dramatically. Complete dense MgB2 layer without B-rich or unreacted B regions was successfully synthesized within Cu coated IMD wires with a larger diameter (1.03 mm) at a temperature as low as 600 degrees C (below Mg melting point). The engineering critical current density of these Cu coated IMD MgB2 wires is even comparable to the best J(e) obtained in IMD MgB2 wires with a small diameter prepared by heating at a high temperature (above Mg melting point) in other groups. The Cu coating technique proposed in the present study opens a promising way to fabricate practical high performance MgB2 superconducting wires with a large diameter at a low temperature.
机译:内部Mg扩散(IMD)工艺可以生产MgB2超导线,其工程临界电流密度是管加工导线中传统粉末的几倍,这使其成为大规模生产实用MgB2导线的诱人且有希望的方法。但是,在热处理开始后不久,MgB2层的生长就停止了,由于缓慢的Mg扩散,未反应的B总是保留在MgB2线内的MgB2层中,对J(e)性能产生负面影响。在本研究中,为解决Mg扩散缓慢的问题并制造高性能MgB2超导线材,将Cu涂层技术创新地引入到内部Mg扩散(IMD)工艺中。发现在加热过程中,Cu涂层首先在低温下与Mg棒反应形成Mg-Cu液体。这种Mg-Cu液体局部集中在Mg棒和B粉末之间,可以为Mg原子向B的扩散提供更高的传输。因此,Mg的扩散速率和距离可以显着增加,并且MgB2层的形成可以显着加速。在低至600摄氏度(低于Mg熔点)的温度下,在直径更大(1.03毫米)的覆铜IMD导线中成功合成了完整的致密MgB2层,没有富B或未反应的B区。这些镀铜的IMD MgB2导线的工程临界电流密度甚至可以与其他组中通过高温(高于Mg熔点)加热制备的小直径IMD MgB2导线获得的最佳J(e)相媲美。本研究中提出的铜涂层技术为在低温下制造大直径的实用高性能MgB2超导线开辟了有希望的方式。

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