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Enhanced average thermoelectric figure of merit of n-type PbTe1-xIx-MgTe

机译:n型PbTe1-xIx-MgTe的平均热电品质因数提高

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The thermoelectric properties of sintered samples of n-type PbTe1-xIx-yMgTe (x = 0.0012-0.006; y = 0 and 1%) were investigated over the temperature range of 300 K to 900 K. Scanning electron microscopy revealed two different length scales of grains in samples with higher I and MgTe contents, while a homogenous microstructure for samples with a lower dopant content. Transmission electron microscopy revealed ubiquitous spherical nanoprecipitates in PbTe1-xIx with MgTe and nanoscale disk like precipitates in both, PbTe1-xIx with and without MgTe. The nanostructured PbTe showed higher Seebeck coefficients than expected values. We also observed a slower rate of increase in the electrical resistivity with rising temperature in PbTe1-xIx-yMgTe below B550 K, leading to a higher thermoelectric power factor. The nanostructures and mixed microstructures scatter phonons, reducing the lattice thermal conductivity as low as 0.4 W K-1 m(-1) at 600 K. A high ZT of 1.2 at 700 K was achieved as well as a high average ZT of 0.8 was observed in PbTe0.996I0.004-1 mol% MgTe for a cold-side temperature of 303 K and a hot-side temperature of 873 K.
机译:在300 K至900 K的温度范围内研究了n型PbTe1-xIx-yMgTe(x = 0.0012-0.006; y = 0和1%)烧结样品的热电性能。扫描电子显微镜显示了两种不同的长度尺度具有较高的I和MgTe含量的样品中的晶粒,而具有较低的掺杂剂含量的样品具有均匀的微观结构。透射电子显微镜显示在具有MgTe的PbTe1-xIx中存在无处不在的球形纳米沉淀,而在有和没有MgTe的PbTe1-xIx中,纳米级盘状沉淀均类似。纳米结构的PbTe的塞贝克系数高于预期值。我们还观察到,在低于B550 K的温度下,PbTe1-xIx-yMgTe的电阻率随温度升高而降低的速率较慢,从而导致较高的热电功率因数。纳米结构和混合的微结构会散射声子,从而在600 K时将晶格热导率降低至0.4 W K-1 m(-1)。在700 K时可实现1.2的高ZT以及0.8的高平均ZT在PbTe0.996I0.004-1 mol%MgTe中观察到的冷端温度为303 K,热端温度为873 K.

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