Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid

摘要

Supplying a trace volume of ionic liquid, [bmim][Tf2N], which contains 5000 ppm of H2O, on the HfO2 film in the conducting-bridge random access memory composed of Cu/HfO2/Pt allows improved efficiency of the memory properties: reduction of operating voltage and prevention of destruction of the electrolyte.