High performance UV light photodetectors based on Sn-nanodot-embedded SnO2 nanobelts

摘要

We report the controlled growth of novel Sn-nanodot-embedded SnO2 nanobelts via a facile chemical vapor deposition method. Structural analysis confirms that the product consists of a single-crystalline SnO2 nanobelt with amorphous Sn nanodots embedded in it, forming an interesting heterostructure. Then, an individual nanobelt-based photodetector was constructed, which exhibits a high external quantum efficiency and high on/off current ratio. Furthermore, the photodetector shows great advantages in the response time compared with other photodetectors made of oxide semiconductor nanostructures, indicating a very high responsivity. The high performance of the heterostructure can be attributed to the perfect crystallinity and the special Sn-nanodot-embedded structure. The present Sn-nanodot-embedded SnO2 nanobelts are envisaged to be strong candidates for high performance UV photodetectors.