Flexible organic transistors based on a solution-sheared PVDF insulator

摘要

Organic field-effect transistors are demonstrated in which the insulator-semiconductor stack of the poly(vinylidene fluoride) (PVDF) and polystyrene (PS): dibenzo-tetrathiavulfalene (DB-TTF) blend is deposited by two low-cost and scalable solution shearing steps onto plastic substrates. The PS vertically phase separates upon coating the DB-TTF:PS blend solution and acts as a smoothening and depolarisation layer for the underlying PVDF. The transistors exhibit a mean mobility of 0.2 cm(2) V-1 s(-1), an on/off ratio of 10(4) and near-zero threshold voltage with high reproducibility, the same performance as on previously reported Si/SiO2 substrates.