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Electrically programmable digital memory behaviors based on novel functional aromatic polyimide/TiO2 hybrids with a high ON/OFF ratio

机译:基于具有高开/关比的新型功能性芳族聚酰亚胺/ TiO2杂化物的电可编程数字存储行为

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摘要

A novel solution-processable sulfur-containing poly(o-hydroxy-imide) 3SOH-6FPI with pendant hydroxyl groups and the corresponding polyimide 3SOH-6FPI/TiO2 hybrids were synthesized from diamine 4,4'-bis(4-amino-3-hydroxyphenylthio}diphenylsulfide (3SOH-DA) and 4,4'-(hexafluoroisopropylidene)-diphthalic anhydride (6FDA), and used for memory applications. To enhance the memory behavior, different amounts of TiO2 were introduced into 3SOH-6FPI and the corresponding tunable memory properties were investigated. The hydroxyl groups on the backbone of 3SOH-6FPI could provide reaction sites for organic-inorganic bonding and the homogeneous hybrid thin films could therefore be obtained by controlling the mole ratio of titanium butoxide/hydroxyl groups via sol-gel reaction. The resulting hybrid films having different TiO2 concentrations from 0 wt% to 50 wt% exhibited electrically programmable digital memory properties from DRAM, SRAM, to WORM with a high ON/OFF current ratio (108). Furthermore, from the results of the current-voltage I-V characteristics, the crystalline phase of titania reveals higher trapping ability to increase the retention time in the ON state. In order to get more insight into the switching mechanism of 3SOH-6FPI/TiO2 hybrid memory devices, molecular simulation and electrode effects were also discussed in this study.
机译:由二胺4,4'-双(4-氨基-3-)合成了具有侧羟基的新型可溶液处理的含硫聚(邻羟基酰亚胺)3SOH-6FPI和相应的聚酰亚胺3SOH-6FPI / TiO2杂化物。羟基苯硫基}二苯硫醚(3SOH-DA)和4,4'-(六氟异亚丙基)-二邻苯二甲酸酐(6FDA),用于存储应用,为增强存储性能,将不同量的TiO2引入3SOH-6FPI中并进行了相应的可调研究了3SOH-6FPI骨架上的羟基可以为有机-无机键合提供反应位点,从而通过溶胶-凝胶反应控制丁氧基钛/羟基的摩尔比可以获得均匀的杂化薄膜。所得的TiO2浓度从0 wt%到50 wt%不等的杂化膜,具有从DRAM,SRAM到WORM的高电通/断电流比的电可编程数字存储特性(108)。从电流-电压I-V特性的结果来看,二氧化钛的结晶相显示出更高的捕获能力,从而增加了在ON状态下的保留时间。为了更深入地了解3SOH-6FPI / TiO2混合存储器件的开关机制,本研究还讨论了分子模拟和电极效应。

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