首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Role of self-assembled tetraoctylammonium bromide on various conjugated polymers in polymer light-emitting diodes
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Role of self-assembled tetraoctylammonium bromide on various conjugated polymers in polymer light-emitting diodes

机译:自组装四辛基溴化铵对聚合物发光二极管中各种共轭聚合物的作用

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This study investigates the role of self-assembled tetraoctylammonium bromide (TOAB) on various conjugated polymers, namely green-emissive poly(9,9-dialkylfluorene) derivative (G-PF), super yellow poly(phenylenevinylene) (SY-PPV), and poly(3-hexytthiophene) (P3HT), in light-emitting devices based'on these polymers. Atomic force microscopy images show that TOAB forms a homogeneous thin film with small grains on G-PF and SY-PPV, but forms an inhomogeneous film with large grains on P3HT. With TOAB deposited on these polymers, the emitting devices show better luminescence efficiency but lower current density compared to those of a Ca/Al cathode device. At a bias of 7 V, TOAB/Al-based devices have 1.67, 1.15, and 0.75 times the current density of the corresponding G-PF/AI-, SY-PPV/AI-, and P3HT/Al-based devices (159, 48, and 1233 mA cm~(-2)), for which the hole injection barriers are 0.4, 0.1, and 0.0 eV, respectively. The increase in current density is attributed to the reduction of the electron injection barrier, which is due to the self-assembly of TOAB on the hydrophobic polymer surfaces for elevating the vacuum level by the interfacial dipole, as evidenced by synchrotron X-ray diffraction results. Of note, the ratio of the current density obtained for devices with and without TOAB decreases with decreasing hole injection barrier. The P3HT-based device shows a current density ratio of less than one (0.75), and thus has the highest light intensity (401 cd m~(-20) due to the hole blocking capability of TOAB.
机译:这项研究调查了自组装四辛基溴化铵(TOAB)在各种共轭聚合物上的作用,这些共轭聚合物是绿色发光的聚(9,9-二烷基芴)衍生物(G-PF),超黄色聚苯撑乙烯(SY-PPV)和基于这些聚合物的发光器件中的聚(3-己基噻吩)(P3HT)。原子力显微镜图像显示,TOAB在G-PF和SY-PPV上形成具有小晶粒的均匀薄膜,而在P3HT上形成具有大晶粒的不均匀薄膜。通过将TOAB沉积在这些聚合物上,与Ca / Al阴极器件相比,发光器件显示出更好的发光效率,但电流密度更低。在7 V的偏压下,基于TOAB / Al的设备的电流密度是相应的基于G-PF / AI-,SY-PPV / AI-和P3HT / Al的设备的电流密度的1.67、1.15和0.75倍(159 ,48和1233 mA cm〜(-2)),其空穴注入势垒分别为0.4、0.1和0.0 eV。电流密度的增加归因于电子注入势垒的减少,这归因于TOAB在疏水性聚合物表面上的自组装,以通过界面偶极子提高真空度,这由同步加速器X射线衍射结果证明。值得注意的是,具有和不具有TOAB的器件所获得的电流密度之比随空穴注入势垒的减小而减小。基于P3HT的器件显示的电流密度比小于1(0.75),因此由于TOAB的空穴阻挡能力而具有最高的光强度(401 cd m〜(-20))。

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