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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Multifunctional carbazolocarbazoles as hole transporting and emitting host materials in red phosphorescent OLEDs
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Multifunctional carbazolocarbazoles as hole transporting and emitting host materials in red phosphorescent OLEDs

机译:多功能咔唑咔唑作为红色磷光OLED中的空穴传输和发射主体材料

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A new series of carbazolo[4,3-c]carbazoles (1-3) have been examined as hole-transporting and emitting host materials in the fabrication of red phosphorescent OLEDs (PhOLEDs). The presence of different N-substituents including hydrogen, octyl and 4-butylphenyl attached to the carbazolo[4,3-c]carbazole skeleton was aimed to condition the charge transporting properties. Due to their resemblance in the electronic structure, these carbazolocarbazoles have been compared to a commonly used hole-transporting material such as N,N'-bis(naphthalen-1-yl)-N,N'-bisphenylbenzidine (NPB). Interestingly, the introduced structural differences endow compounds 1-3 with a wide range of hole-mobilities, which provide room for adjusting the carrier balance of OLEDs. Different approaches, including bi-layer and tri-layer architectures, have been employed for the successful fabrication of lr(piq)2(acac) doped OLEDs using NPB and these novel carbazolocarbazoles as hole transport and host materials. The simplified bi-layer device demonstrated high performance with maximum efficiencies of 8.7%, 5.6 cd A~(-1) and 3.4 Im W~(-1) when using the N-alkylated derivative 2. Furthermore, the red PhOLEDs with tri-layer architecture using 3 as the HTL showed peak efficiencies of 12.2%, 8.7 cd A~(-1), and 9.3 Im W~(-1), In addition, both compounds 2 and 3 used in OLEDs exhibited superior performance to those of devices using NPB, demonstrating their high potential for employment in phosphorescent OLEDs.
机译:在红色磷光OLED(PhOLED)的制造中,已经研究了一系列新的咔唑[4,3-c]咔唑(1-3)作为空穴传输和发射主体材料。旨在连接到咔唑[4,3-c]咔唑骨架上的氢,辛基和4-丁基苯基等不同N-取代基的存在是为了调节电荷传输性能。由于它们在电子结构上的相似性,已将这些咔唑咔唑与常用的空穴传输材料(例如N,N'-双(萘-1-基)-N,N'-双苯基联苯胺(NPB))进行了比较。有趣的是,引入的结构差异使化合物1-3具有广泛的空穴迁移率,这为调节OLED的载流子平衡提供了空间。已经采用了包括双层和三层体系结构在内的不同方法来成功制造使用NPB和这些新型咔唑咔唑作为空穴传输和主体材料的lr(piq)2(acac)掺杂的OLED。使用N-烷基化衍生物2时,简化的双层器件表现出较高的性能,最大效率为8.7 cd A〜(-1)和5.6 cd W〜(-1)。此外,具有三使用3作为HTL的层结构显示的峰值效率为12.2%,8.7 cd A〜(-1)和9.3 Im W〜(-1)。此外,用于OLED的化合物2和3均表现出优于使用NPB的设备,证明了其在磷光OLED中的巨大应用潜力。

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