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Fluorinated 9,9 -spirobifluorene derivatives as host materials for highly efficient blue organic light-emitting devices

机译:氟化9,9-螺双芴衍生物用作高效蓝色有机发光器件的主体材料

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A series of new fluorinated 9,9'-spirobifluorene derivatives (SFs) have been designed and synthesized for organic light-emitting devices (OLEDs). The spatial structure of 2,2',7,7'-tetrakis(2,4-bifluorophenyl)spiro-9,9'-bifluorene was determined by X-ray diffraction analysis. With the different substitution patterns of electron-withdrawing groups, such as F and CF3, the photophysical properties, energy levels and thermal stabilities of these SFs can be tuned, which is supported by density functional studies of their geometries and electronic structures. A non-doped deep blue OLED using 2,2',7,7'-tetrakis(3-fluorophenyl)spiro-9,9'-bifluorene (Spiro-(3)-F) as the emitter shows excellent Commission Internationale de l'Edairage (CIE) coordinates of (0.169, 0.122) with emission peaking at ca. 408 nm. Furthermore, these SFs serve as an excellent host material for the 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl dopant to form high-performance OLEDs with low turn-on voltages and high efficiencies, especially for Spiro-(3)-F as the fluorescent host with pure blue CIE coordinates of (0.149, 0.187), a low turn-on voltage of 3.4 V, high luminance of over 10 000 cd m~(-2), a high current efficiency of 6.66 cd A~(-1), and a high external quantum efficiency of 4.92%. The high efficiency is attributed to the high carrier mobility together with the low injection barriers for both the electron and the hole in the Spiro-(3)-F-based device.
机译:已经设计并合成了一系列新的氟化9,9'-螺二芴衍生物(SF),用于有机发光器件(OLED)。通过X射线衍射分析确定2,2',7,7'-四(2,4-二氟苯基)螺-9,9'-联芴的空间结构。利用诸如F和CF3等吸电子基团的不同取代模式,可以调节这些SF的光物理性质,能级和热稳定性,这通过对其几何形状和电子结构的密度泛函研究得到支持。使用2,2',7,7'-四(3-氟苯基)螺-9,9'-联芴(Spiro-(3)-F)作为发射体的未掺杂深蓝色OLED表现出出色的国际委员会'Edairage(CIE)坐标为(0.169,0.122),其发射峰值在ca. 408纳米此外,这些SF可以作为4,4'-双(9-乙基-3-咔唑乙烯撑)-1,1'-联苯掺杂剂的优良基质材料,从而形成具有低开启电压和高效率的高性能OLED。 ,特别是对于Spiro-(3)-F作为荧光主体,其纯蓝色CIE坐标为(0.149,0.187),低启动电压为3.4 V,高亮度超过10000 cd m〜(-2),电流效率高达6.66 cd A〜(-1),外部量子效率高达4.92%。高效率归因于高载流子迁移率以及基于Spiro-(3)-F的器件中电子和空穴的低注入势垒。

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