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首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Dye-sensitized nanostructured crystalline mesoporous tin-doped indium oxide films with tunable thickness for photoelectrochemical applications
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Dye-sensitized nanostructured crystalline mesoporous tin-doped indium oxide films with tunable thickness for photoelectrochemical applications

机译:染料敏化的纳米结构晶体中孔掺锡氧化铟薄膜,厚度可调节,用于光电化学

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摘要

A simple route towards synthesis of nanostructured mesoporous Indium-Tin Oxide (templatednano-ITO) electrodes exhibiting both high conductivities and optimized bicontinuous pore-soiid network is reported. The ITO films are first produced as an X-ray-amorphous, high surface area material, by adapting recently established template-directed sol-gel methods using Sn(IV) and in(III) salts. Carefully controlled temperature/atmosphere treatments convert the as-synthesized ITO films into nano-crystalline coating$ with the cubic bixbyite structure. In particular, a multi-layered synthesis was successfully undertaken for tuning the film thickness. In order to evaluate the performances of templated nano-ITO as an electrode substrate for photoelectrochemical applications, photoelectrodes were prepared by covalent grafting of a redox-active dye, the complex [Ru(bpy)2(4,4'-(CH2PO3H2)2-bpy)]Cl2 1 (bpy = bipyridine). Surface coverage was shown to increase with the film thickness, from 0.7 x 10~(-9) molcm~(-2) (one layer, 45 nm) to 3.5 x 10~(-9) molcm~(-2) (ten layers, 470 nm), the latter value being ~100 times larger than that for commercially available planar ITO. In the presence of an electron mediator, photocurrents up to 50 μA cm~(-2) have been measured under visible light irradiation, demonstrating the potential of this new templated nano-ITO preparation for the construction of efficient photoelectrochemical devices.
机译:报道了一种合成纳米结构的介孔氧化铟锡(templatednano-ITO)电极的简单方法,该电极同时显示出高电导率和优化的双连续孔-油状网络。通过采用Sn(IV)和in(III)盐适应最近建立的模板指导的溶胶-凝胶方法,首先将ITO膜制成X射线无定形的高表面积材料。精心控制的温度/气氛处理可将合成后的ITO膜转变为具有立方方锰矿结构的纳米晶体涂层。特别地,成功地进行了多层合成以调节膜厚度。为了评估模板化纳米ITO作为光电化学应用的电极基材的性能,通过共价接枝氧化还原活性染料[Ru(bpy)2(4,4'-(CH2PO3H2)2 -bpy)] Cl 2 1(bpy =联吡啶)。表面覆盖率随膜厚的增加而增加,从0.7 x 10〜(-9)molcm〜(-2)(一层,45 nm)增加到3.5 x 10〜(-9)molcm〜(-2)(十层(470nm),后者的值是市售平面ITO的约100倍。在电子介体的存在下,在可见光照射下已测量到高达50μAcm〜(-2)的光电流,证明了这种新型模板化纳米ITO制剂在构建高效光电化学装置方面的潜力。

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