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Adjustable electronic performances and redox ability of a g-C3N4 monolayer by adsorbing nonmetal solute ions: a first principles study

机译:吸附非金属溶质离子可调节g-C3N4单层的电子性能和氧化还原能力:第一个原理研究

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During the process of hydrogen generation via photocatalytic water splitting, solute ions may be adsorbed on the surface of the graphitic carbon nitride (g-C3N4) monolayer, modifying its electronic and optical performances, as well as its redox ability due to chemical bond relaxation. With the aid of first principles calculations, we investigated the properties of a g-C3N4 monolayer with a series of nonmetal (NM) ions adsorbed on its surface. The obtained results revealed that the adsorbed solute ions can form NM-N or NM-C bonds with the g-C3N4 monolayer and result in bond relaxation, altering the valence band maximum and conduction band minimum synchronously. The small coverage rate of Br, Cl and I ions enhances the redox ability of g-C3N4 synchronously, while the adsorption of the other solute ions enhances the oxidizability and weakens the reducibility. In addition, the adsorption of solute ions can alter the active sites by impacting the distribution of the highest occupied molecular orbital and the lowest unoccupied molecular orbital. Therefore, we can adjust the electronic, optical performances and redox ability of a g-C3N4 monolayer by selecting the suitable type and quantity of solute ions, e.g., the photocatalytic efficiency of g-C3N4 can be enhanced by H ions plus B, N, Si, O, P and As ions with high coverage rates plus halogen ions with low coverage rates while it is suppressed by C, S, Se and Te ions.
机译:在通过光催化水分解制氢的过程中,溶质离子可能会吸附在石墨氮化碳(g-C3N4)单层表面上,从而由于化学键松弛而改变其电子和光学性能以及氧化还原能力。借助第一性原理计算,我们研究了在其表面吸附了一系列非金属(NM)离子的g-C3N4单层的性质。获得的结果表明,吸附的溶质离子可以与g-C3N4单层形成NM-N或NM-C键并导致键松弛,从而同时改变价带最大值和导带最小值。 Br,Cl和I离子的低覆盖率同步提高了g-C3N4的氧化还原能力,而其他溶质离子的吸附则增强了氧化性并削弱了还原性。另外,溶质离子的吸附可通过影响最高占据分子轨道和最低未占据分子轨道的分布来改变活性位点。因此,我们可以通过选择合适的溶质离子类型和数量来调整g-C3N4单层的电子,光学性能和氧化还原能力,例如,H离子加B,N,N可以提高g-C3N4的光催化效率。具有高覆盖率的Si,O,P和As离子,以及具有低覆盖率的卤素离子,同时被C,S,Se和Te离子抑制。

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