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首页> 外文期刊>Journal of nanomaterials >Theoretical investigation on single-wall carbon nanotubes doped with nitrogen, pyridine-like nitrogen defects, and transition metal atoms
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Theoretical investigation on single-wall carbon nanotubes doped with nitrogen, pyridine-like nitrogen defects, and transition metal atoms

机译:氮,吡啶样氮缺陷和过渡金属原子掺杂的单壁碳纳米管的理论研究

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摘要

This study addresses the inherent difficulty in synthesizing single-walled carbon nanotubes (SWCNTs) with uniform chirality and well-defined electronic properties through the introduction of dopants, topological defects, and intercalation of metals. Depending on the desired application, one can modify the electronic and magnetic properties of SWCNTs through an appropriate introduction of imperfections. This scheme broadens the application areas of SWCNTs. Under this motivation, we present our ongoing investigations of the following models: (i) (10, 0) and (5, 5) SWCNT doped with nitrogen (CN x NT), (ii) (10, 0) and (5, 5) SWCNT with pyridine-like defects (3NV-CN x NT), (iii) (10, 0) SWCNT with porphyrine-like defects (4ND-CN x NT). Models (ii) and (iii) were chemically functionalized with 14 transition metals (TMs): Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Pd, Ag, Pt and Au. Using the spin-unrestricted density functional theory (DFT), stable configurations, deformations, formation and binding energies, the effects of the doping concentration of nitrogen, pyridine-like and porphyrine-like defects on the electronic properties were all examined. Results reveal that the electronic properties of SWCNTs show strong dependence on the concentration and configuration of nitrogen impurities, its defects, and the TMs adsorbed.
机译:这项研究解决了通过引入掺杂剂,拓扑缺陷和金属插层来合成具有均匀手性和明确电子性质的单壁碳纳米管(SWCNT)的固有困难。根据所需的应用,可以通过适当引入缺陷来改变SWCNT的电子和磁性。该方案拓宽了SWCNT的应用领域。在这种动机下,我们介绍了我们对以下模型的持续研究:(i)(10,0)和(5,5)掺杂有氮(CN x NT)的SWCNT,(ii)(10,0)和(5, 5)具有吡啶样缺陷的SWCNT(3NV-CN×NT),(iii)(10,0)具有卟啉样缺陷的SWCNT(4ND-CN×NT)。模型(ii)和(iii)用14种过渡金属(TM)化学功能化:Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Zn,Pd,Ag,Pt和Au。利用自旋无限制密度泛函理论(DFT),研究了稳定构型,形变,形成和结​​合能,氮掺杂浓度,吡啶样和卟啉样缺陷对电子性能的影响。结果表明,SWCNTs的电子性能强烈依赖于氮杂质的浓度和构型,其缺陷以及所吸附的TMs。

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