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Theoretical investigation of fluorination effect on the charge carrier transport properties of fused anthra-tetrathiophene and its derivatives

机译:氟化对稠合蒽-四噻吩及其衍生物电荷载流子传输特性影响的理论研究

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The crystal structures of known anthra-tetrathiophene (ATT) and its three fluorinated derivatives (ATT1, ATT2 and ATT3) were predicted by the Monte Carlo-simulated annealing method with the embedded electrostatic potential (ESP) charges. The most stable crystal structures were further optimized by the density functional theory with the dispersion energy (DFT-D) method. In addition, the effect of the electron withdrawing fluorine atoms on the molecular geometry, molecular stacking, electronic and transport properties of title compounds were investigated by the density functional theory and the incoherent charge-hopping model. The calculated results show that the introduction of fluorine atoms does not affect the molecular planarity but decreases the HOMO-LUMO gap, which is beneficial to electron injection and provides more charge carrier stabilization. The improved electron mobility from ATT to ATT3 is attributed to the favorable molecular packing with strong, pi-pi interaction and the short stacking distance. ATT2 and ATT3 exhibit remarkable angular dependence of mobilities and anisotropic behaviors. The band structures reveal that all the paths with larger transfer integrals are along the directions of large dispersions in the valence band (VB) and conduction band (CB). ATT3 has the largest electron mobility (0.48 cm(2) V-1 s(-1)) among the four compounds, indicating that fluorination is an effective approach to improve electron transport. (C) 2015 Elsevier Inc. All rights reserved.
机译:通过蒙特卡罗模拟退火方法,利用嵌入的静电势(ESP)电荷,预测了已知的蒽四噻吩(ATT)及其三个氟化衍生物(ATT1,ATT2和ATT3)的晶体结构。最稳定的晶体结构通过密度泛函理论和色散能量(DFT-D)方法进一步优化。此外,通过密度泛函理论和非相干电荷跳跃模型研究了吸电子氟原子对标题化合物分子几何结构,分子堆积,电子和输运性质的影响。计算结果表明,氟原子的引入不会影响分子的平面性,但会减小HOMO-LUMO间隙,这有利于电子注入并提供更多的电荷载流子稳定性。从ATT到ATT3的电子迁移率提高归因于具有强的pi-pi相互作用和较短的堆积距离的良好分子堆积。 ATT2和ATT3表现出显着的迁移率和各向异性行为的角度依赖性。能带结构表明,具有较大传递积分的所有路径均沿价带(VB)和导带(CB)中的大分散方向。 ATT3具有四种化合物中最大的电子迁移率(0.48 cm(2)V-1 s(-1)),表明氟化是提高电子传输的有效方法。 (C)2015 Elsevier Inc.保留所有权利。

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