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A Facile Method to Fabricate Ultrathin Vertical ZnO Nanowall Arrays

机译:一种制造超薄垂直ZnO纳米壁阵列的简便方法

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We demonstrate a facile method to synthesize ultrathin vertical ZnO nanowall arrays only through a one-step catalyst fabrication procedure. After being coated with uniformly dispersed gold particles, the substrates were polished gently to create discrete gold nanoparticle alignment as catalyst. The commercial ZnO powder and activated carbon powder with an atom ratio of 1:1 were utilized as source materials, and the whole growth process occurred in a conventional tube furnace chemical vapor deposition (CVD) system. The SEM images confirm that the ZnO nanowall arrays grow vertically along certain tracks made by polishing. The walls are about 17 nm wide, 90 nm high and 1 μm long after 90 min growth. After second growth, the nanowalls become 20 nm wide, 205 nm high, and 2 μm long. AFM images indicate that the alignment of discrete Au particles with certain separations due to polishing plays the key role in realizing vertical ZnO nanowall arrays.
机译:我们展示了一种仅通过一步一步的催化剂制备程序即可合成超薄垂直ZnO纳米壁阵列的简便方法。用均匀分散的金颗粒涂覆后,将基材轻轻抛光,以形成离散的金纳米颗粒排列作为催化剂。以原子比为1:1的市售ZnO粉末和活性炭粉末作为原料,整个生长过程发生在常规的管式炉化学气相沉积(CVD)系统中。 SEM图像证实了ZnO纳米壁阵列沿着由抛光产生的某些轨道垂直生长。生长90分钟后,壁宽约17 nm,高约90 nm,长约1μm。在第二次生长后,纳米壁变为20 nm宽,205 nm高和2μm长。 AFM图像表明,由于抛光而导致的具有一定间隔的离散Au粒子的排列在实现垂直ZnO纳米壁阵列中起关键作用。

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