Characteristics and Fabrication of Vertical Type Organic Light Emitting Transistor Using Dimethyldicyanoquinonediimine (DMDCNQI) as a n-Type Active Layer and Light Emitting Polymer

摘要

We have investigated electrical properties of vertical type organic transistor using dimethyldicyanoquinonediimine (DMDCNQI) as a n-type active layer. And also, the contact resistance R_c for charge injection from a metal electrode to an organic semiconductor layer was studied by transfer line method. The radiance of organic light emitting transistor (OLET) consisting of glass/ITO (drain)/PEDOT:PSS/MEH-PPV/DMDCNQI/AI (gate)/DMDCNQI/Au (source) can be effectively controlled by applying gate voltage like depletion mode.