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首页> 外文期刊>Journal of Nanophotonics >Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO_2-SiC horizontal slot waveguides
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Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO_2-SiC horizontal slot waveguides

机译:等离子体增强化学气相沉积SiC-SiO_2-SiC水平缝隙波导的传感性能

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摘要

We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO_2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB/cm for the quasi-transverse magnetic mode. To assess the potential of this device as a sensor, we simulated the confinement factor in the slot. This simulation revealed that SiC-based slot waveguides can be used, advantangeously, for sensing as the confinement strongly varies with the refractive index of the slot material. A confinement factor change of 0.15/refractive index units was measured for different slot materials.
机译:我们首次研究了等离子体增强化学气相沉积(PECVD)SiC-SiO_2-SiC水平缝隙波导的传感能力。对于准横向磁模式,测得的光传播损耗为23.9 dB / cm。为了评估该设备作为传感器的潜力,我们模拟了插槽中的限制因素。该模拟表明,由于边界随缝隙材料的折射率而变化很大,因此可以方便地使用基于SiC的缝隙波导进行传感。对于不同的缝隙材料,限制因子变化为0.15 /折射率单位。

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