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Fabrication of Hemispherical Nano Structure on a Curved Al Surface Using Low-Temperature and High-Voltage Anodizing Method

机译:低温高压阳极氧化法在曲面铝表面制备半球形纳米结构

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摘要

A simple method of fabricating hemispherical nanostructures on a curved aluminum rod surface was presented. In conventional methods of fabricating nanopatterns on a curved aluminum surface, mechanical or chemical processes have been widely used for the lens technologies. Such processes are not only expensive with long processing times, however, but they also involve local fabrication and are limited in the dimension size. In this paper, a method of fabricating hemispherical nanostructures on a curved aluminum surface is suggested for a functional three-dimensional (3D) master using a low-temperature and high-voltage (LTHV) anodizing method. By reducing the aluminum reaction rate under a low-temperature environment, the reaction current density can be remarkably reduced even though a high voltage was induced. Using the LTHV anodizing method, the hemispherical pattern size can be easily controlled with respect to voltage variations. The sizes of the hemispherical nanopatterns were about 150-300 nm. Using the LTHV anodizing process, hemispherical nanostructures can be obtained on a curved aluminum surface with controllable pattern sizes of 150-300 nm without defects such as burring from Joule's heat, micro-scratches, and cracks. A curved 3D hemispherical nanostructure may be used as a master in the roll-to-roll process.
机译:提出了一种在弯曲的铝棒表面上制造半球形纳米结构的简单方法。在弯曲的铝表面上制造纳米图案的常规方法中,机械或化学工艺已广泛用于透镜技术。但是,这样的过程不仅昂贵且处理时间长,而且还涉及局部制造并且尺寸尺寸受到限制。在本文中,提出了一种使用低温高压(LTHV)阳极氧化方法在功能性三维(3D)母版上在弯曲的铝表面上制造半球形纳米结构的方法。通过降低低温环境下的铝反应速度,即使感应出高电压也可以显着降低反应电流密度。使用LTHV阳极氧化方法,可以相对于电压变化轻松控制半球形图形尺寸。半球形纳米图案的尺寸为约150-300nm。使用LTHV阳极氧化工艺,可以在弯曲的铝表面上获得半球形纳米结构,图案大小可控制在150-300 nm之间,而没有诸如焦耳热,微划痕和裂纹等毛刺的缺陷。弯曲的3D半球形纳米结构可以在卷对卷过程中用作母版。

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