A comparative study of diode pumped microchip laser materials: Nd-doped YVO4, YOS, SFAP and SVAP

摘要

The lasing performance of the Nd-doped microchip laser host materials YVO4, YOS, SFAP and SVAP operating on the 1 mum transition in Nd is examined. With 0.5 W and 2 W laser diode array pump sources Nd:YVO4 remains the material of choice for this transition while both Nd:SFAP and Nd:YOS show promise, although higher doping concentrations are required. Pump-induced damage made Nd:SVAP unsuitable as a microchip laser material.