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首页> 外文期刊>Journal of Mechanical Science and Technology >The array-control heater and non-uniform resistance module design for regulating the temperature profile in a reactor chamber
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The array-control heater and non-uniform resistance module design for regulating the temperature profile in a reactor chamber

机译:用于调节反应室温度分布的阵列控制加热器和非均匀电阻模块设计

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摘要

The process chamber is the core unit of chamber-category integrated circuit manufacturing equipment. The physical field distribution in the chamber directly determines the process quality, but flexible and refined regulation of the physical field is the severest difficulty the equipment design confronts. The actual process chamber is relatively rigid in general, and lacks enough degrees of freedom (DOF) to flexibly regulate the distribution of process factors. As a result, it is difficult to achieve refined regulation of the process quality of the large-area wafer. To solve this problem, a multi-DOF and flexible design concept for the spatial distribution of process factors was proposed, and based on this concept, two typical design solutions were presented. To solve this kind of high-DOF and physical field involved design problem, a generalized profile error feedback (PEF) method was established that employs an iterative-approximation mode and starts from an initial guessed model. Four operations, including error obtainment, weight matrix configuration, error distribution and compensation, are in each iteration step. This iterative loop is run to make the current physical field profile in the critical domain continuously approximate the expected profile. The two design solutions both achieved the flexible and refined regulation of the thermal field via the PEF method. And under the condition of model-based simulation, the PEF method drove the current temperature profile to approximate the expected one in the chamber, and found a design variables sequence to make the relative error reduce from 2.91 similar to 5.28% of the initial guessed model to 0.012 similar to 0.015%.
机译:处理腔室是腔室类集成电路制造设备的核心单元。腔室中的物理场分布直接决定过程质量,但是对物理场的灵活细化调节是设备设计面临的最严峻困难。实际的处理腔室通常相对较硬,并且缺乏足够的自由度(DOF)来灵活地调节处理因子的分布。结果,难以实现大面积晶片的工艺质量的精细调节。为解决这一问题,提出了一种多自由度和灵活的工艺因素空间分布设计思想,并在此基础上提出了两种典型的设计方案。为了解决这种高自由度和物理场涉及的设计问题,建立了一种通用的轮廓误差反馈(PEF)方法,该方法采用迭代近似模式并从初始猜测模型开始。每个迭代步骤中有四个操作,包括错误获取,权重矩阵配置,错误分布和补偿。运行此迭代循环以使关键域中的当前物理场轮廓连续逼近预期轮廓。两种设计解决方案均通过PEF方法实现了对热场的灵活细化调节。在基于模型的仿真条件下,PEF方法驱动当前温度曲线逼近腔室中的预期温度曲线,并找到一个设计变量序列,使相对误差从2.91降低到初始猜测模型的5.28%。到0.012类似于0.015%。

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