Thermal buckling analysis in InSb focal plane arrays detector

摘要

When exploring the buckling mechanism in indium antimonide (InSb) detector, the global square checkerboard buckling pattern reappears in finite element simulation results. The contributions from the three layered materials to the deformations along the Z-direction are systematically analyzed. Analysis of results shows that the buckling deformation originated from the thermal difference between silicon readout integrated circuits (silicon-ROIC) and the intermediate layer directly above. Furthermore, the buckling pattern is determined by indium bumps array. After passing through the 10 μm intermediate layer, the deformation amplitude is significantly reduced from 2.23 μm to 0.24 μm. Afterwards, passing upward through the 10 μm InSb chip, the maximal deformation is further decreased to 0.09 μm.