Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

摘要

We demonstrate efficient generation of terahertz (THz) frequency radiation by pulsed excitation, at wavelengths between 800 and 1550 nm, of photoconductive (PC) switches fabricated using Fe-doped InGaAsP wafers, grown by metal organic chemical vapor deposition (MOCVD). Compared to our previous studies of Fe-doped InGaAs wafers, Fe:InGaAsP wafers exhibited five times greater dark resistivity to give a value of 10 ka" cm, and Fe:InGaAsP PC switches produced five times higher THz power emission. The effect of Fe-doping concentration (between 1E16 and 1.5E17 cm(-3)) on optical light absorption (between 800 and 1600 nm), on resistivity, and on THz emission is also discussed.