Influence of growth parameters on the structure of YBCO thin films prepared by sequential deposition and annealing

摘要

The microwave application of superconductors generally requires large area double-sided Y_1Ba_2Cu_3O_(7-x) (YBCO) thin films. Epitaxial YBCO thin films have been successfully prepared by in situ and ex situ procedures [1]. The crystalline qualities of in situ grown YBCO thin films are usually good. But it is difficult to prepare large size double'sided YBCO thin films by in situ growth procedure because of complication of the apparatus [2, 3]. Although the crystalline qualities of ex situ grown YBCO thin films are not as good as that of the in situ grown ones. It is convenient to prepare large area double-sided YBCO thin films by ex situ procedure [4, 5]. A new growth procedure, sequential deposition and annealing (SDA), which is suitable for fabrication of large size epitaxy thin films, was proposed [6]. Purely c-axis oriented YBCO thin films were prepared by SDA. Influence of growth parameters on the structure and superconducting transition properties of SDA grown YBCO thin films is reported in this letter.