Deformation of aluminum thin foils under uniaxial tensile stress at elevated temperatures

摘要

The failure of an interconnecting line has usually been found in integrated circuits to be due to the large thermal stress in the line which has been caused by the mismatch of thermal expansions between the metallic line and the insulating film, e.g. Al and SiO_2. The failure is considered as a deformation and fracture of thin film at elevated temperatures when the film is manufactured in an actual situation. Prior to direct attempts to solve the fracture problem of the actually deposited connecting lines for improving the reliability of the interconnecting line, it is important to obtain fundamental knowledge on the deformation of a thin free-standing film.