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首页> 外文期刊>Journal of Materials Science Letters >Electrodeposition of zinc cadmium sulphide thin films from acidic aqueous electrolyte solution at room temperature
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Electrodeposition of zinc cadmium sulphide thin films from acidic aqueous electrolyte solution at room temperature

机译:在室温下从酸性电解质水溶液中电沉积硫化锌锌薄膜

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摘要

Thin film of CdS and ZnxCd1-xS have been used in optical and opto-electronic devices. The band gap energy of ternary ZnvCdi_ VS can be varied between that of CdS (-2.4 ev) and ZnS (-3.7 eV) by varying the Zn/Cd ratio. A number of techniques such as vacuum evaporation [1,2], MOVPE growth on GaAs [3], spray pyrolysis [4] and electrodeposition [5, 6] have been utilized to prepare Zn,Cd1_i.S thin films. Electrodeposited CdS films have been obtained potentiostatically from aqueous electrolyte solution under d.c. [7] as well as periodic pulse [8] conditions, and galvanostatically from non-aqueous solutions [5, 9]. The potentiostatic electrodeposition of ZnxCd1-x.S has been done at 90 °C from aqueous electrolyte solution [6]. We have already electro-deposited ZnvCdi_,.S films galvanostatically from non-aqueous electrolyte solution at 120 °C onto transparent conducting glass [5]. In this letter, we report on the potentiostatic electrodeposition of ZnA.Cdt_A.S from acidic aqueous electrolyte solution at room temperature.
机译:CdS和ZnxCd1-xS薄膜已用于光学和光电设备。通过改变Zn / Cd比,可以在CdS(-2.4 ev)和ZnS(-3.7 eV)之间改变三元ZnvCdi_ VS的带隙能量。诸如真空蒸发[1,2],在GaAs上进行MOVPE生长[3],喷雾热解[4]和电沉积[5,6]等多种技术已用于制备Zn,Cd1_i.S薄膜。电沉积的CdS膜已在直流电下从电解质水溶液恒电位获得。 [7]以及周期性脉冲[8]条件,以及非水溶液中的恒电流[5,9]。 ZnxCd1-x.S的恒电位电沉积是在90°C的水溶液中进行的[6]。我们已经将非水电解质溶液在120°C的电沉积下将ZnvCdi。,S膜电沉积到透明导电玻璃上[5]。在这封信中,我们报告了室温下酸性水溶液中ZnA.Cdt_A.S的恒电位电沉积。

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