Temperature dependence of free-exciton luminescence of undoped In0.5Ga0.5P layers grown by liquid phase epitaxy

Yoon IT.

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Temperature dependence of free-exciton luminescence of undoped In0.5Ga0.5P layers grown by liquid phase epitaxy

机译：液相外延生长的非掺杂In0.5Ga0.5P层的自由激子发光的温度依赖性

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来源
《Journal of Materials Science Letters》 |1998年第24期|共3页
作者
Yoon IT.;
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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
100 gaas; Photoluminescence; Ingap;

机译：100 gaas;光致发光;Ingap;

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专利

1. Temperature dependence of free-exciton luminescence of undoped In0.5Ga0.5P layers grown by liquid phase epitaxy [J] . Yoon IT. Journal of Materials Science Letters . 1998,第24期

机译：液相外延生长的非掺杂In0.5Ga0.5P层的自由激子发光的温度依赖性
2. Tellurium and zinc doping in In0.5Ga0.5P grown by liquid‐phase epitaxy [J] . Journal of Applied Physics . 1985,第11期

机译：液相外延生长In0.5Ga0.5P中的碲和锌掺杂
3. Deep level transient spectroscopy studies of undoped and Sn-doped Al_xGa_(1-x)As epilayers grown by liquid-phase epitaxy [J] . R. Jothilingam, S. Aravanan, K. Baskar Journal of Materials Science Letters . 1996,第13期

机译：液相外延生长未掺杂和锡掺杂的Al_xGa_（1-x）As外延层的深层瞬态光谱研究
4. High-temperature illumination-induced metastability in undoped semi-insulting GaN grown by metalorganic vapor phase epitaxy [C] . Z.Q.Fang, B.B.Claflin, D.C.Look, Materials Research Society Symposium . 2003

机译：通过金属机气相外延生长未掺杂的半泥浆甘型中的高温照明诱导的迁移性
5. Photoluminescence and Electrical Properties of Impurity-doped ZnSe Layers Grown by Molecular Beam Epitaxy利用統計を見る [D] . Ohkawa Kazuhiro 1992

机译：分子束外延生长掺杂杂质的ZnSe层的光致发光和电学性质
6. Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy [O] . Kwang Wook Park, Chang Young Park, Sooraj Ravindran, 2014

机译：通过分子束外延在Si（100）上生长的GaAs / GaInAs核-多量子阱壳纳米线结构的室温光致发光的观察和可调性
7. Temperature dependence of photoluminescence from Mg-doped In0.5Ga0.5P grown by liquid-phase epitaxy [O] . Lu 2012

机译：液相外延生长掺Mg的In0.5Ga0.5P对光致发光的温度依赖性

Temperature dependence of free-exciton luminescence of undoped In0.5Ga0.5P layers grown by liquid phase epitaxy

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