Chemical and mechanical polishing effects on capacitance-voltage curve recovery of MOS capacitors passivated with AIF3-GeO2-B2O3 glasses exposed to water vapour

摘要

Borophosphosilicate glass films formed from inorganic gas sources have been widely used in high-density integrated circuits as dielectric insulators [1-3]. The advantageous properties of such films are conformal step coverage, effective protection against alkali ions, and a fairly low reflow temperature. Highly doped borophosphosilicate glasses reflow at low temperatures to give step coverage of ultra-high-density integrated circuits, but they also suffer from a tendency to crystallize during the reflow process [4]. Such crystallization is a fatal drawback in the planar-ization of ultra-high-density integrated circuits [4].