Transition-metal oxides have potential use, particularly in thin-film form, for a wide variety of applications involving optical switching and electrochemical devices [1], V2O5 films are of considerable technological interest because of their applications in electrochromic devices [2] and lithium micro-batteries [3]. However, these applications depend on the techniques used to grow the films, and the device performances are related with crystallinity and morphology of the films [4]. Thin films of vanadium pentoxide can be prepared by various methods, in some cases the V2O5 exhibiting a non-stoichiometric character because of the oxygen-rich nature of this compound. It has been reported that flash-evaporated films are more homogeneous and exhibit better properties than others [5]. This advantage of flash-evaporation has been used to grow polycrystalline V2O5 films. The purpose of this letter is to investigate the relationship between growth conditions, structural properties and electrical conductivity of flash-evaporated V2O5 films.
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