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Observation of the Semiconductor-Semimetal and Semimetal-Semiconductor Transitions in Bi Quantum Wires Induced by Anisotropic Deformation and Magnetic Field

机译:各向异性变形和磁场在双量子线中半导体-半金属和半金属-半导体跃迁的观察

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摘要

The semimetal-semiconductor transition is observed in glass-coated quantum single-crystal bismuth wires with diameters less than 70 nm due to the quantum size effect. It is found that elastic deformation of Bi nanowires (1011) oriented along the wire axis with the semiconductor dependence R(T) leads to the approaching of L and T bands and to the semiconductor-semimetal transition; as a result, Shubnikovde Haas oscillations appear on the magnetoresistance dependences R(H). It is shown that strong magnetic field and elastic deformation are the tools to control gap size in quantum bismuth wires, which is principal for their practical use in particular in thermoelectricity.
机译:由于量子尺寸效应,在直径小于70 nm的玻璃涂层量子单晶铋导线中观察到半金属-半导体跃迁。发现沿线轴取向的Bi纳米线(1011)的弹性变形具有半导体相关性R(T),导致L带和T带的接近以及半导体-半金属的转变。结果,Shubnikovde Haas振荡出现在磁阻依赖性R(H)上。结果表明,强磁场和弹性变形是控制量子铋线中间隙尺寸的工具,这对于它们的实际应用尤其是在热电中是重要的。

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