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Electrophoretic deposition [EPD] applied to reaction joining of silicon carbide and silicon nitride ceramics

机译:电泳沉积[EPD]用于碳化硅和氮化硅陶瓷的反应连接

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Electrophoretic Deposition (EPD) was used to deposit a mixture of SiC or Si_(3)N_(4) "filler" and reactive carbon (graphite and carbon black) particles onto various SiC or Si_(3)N_(4) parts in preparation for reaction bonding. The particles had gained a surface charge when mixed into an organic liquid consisting of 90 w % acetone +10 w % n-butyl amine to form a slurry. The charged particles then moved when placed under the influence of an electric field to form a "green" deposit on the ceramic parts. The green parts were then dried and subsequently joined using a reaction bonding method. In this reaction bonding, molten Si moves into the joint via capillary action and then dissolves carbon and precipitates additional SiC. An optimum mixture of SiC "filler" to C powder ratio of 0.64 was identified. Residual un-reacted or "free" Si was minimized as a result of selecting powders with well-characterized particle size distributions and mixing them in batch formulas generated as part of the research. Image analysis of resulting microstructures indicated residual "free" Si content as low as 7.0 vol % could be realized. Seven volume percent compares favorably with the lowest "free" Si levels available in experimental samples of bulk siliconized (reaction-bonded) SiC manufactured using conventional reaction-bonding techniques. The joints retained the residual silicon over a large number of high-temperature thermal cycles (cycling from below to above the melting point of silicon). Comparisons to commercial reaction-bonded SiC indicated the majority of residual silicon of the joint was retained in closed porosity. This infers that parts made with these joints might be successfully utilized at very high temperatures. It was demonstrated that the EPD technique could be applied to butt, lap, and scarf type joints, including the capability to fill large gaps or undercut sections between parts to be joined. The overall results indicate that EPD, combined with reaction bonding, should allow for the fabrication of large complex structures manufactured from smaller components consisting of silicon carbide or silicon nitride.
机译:电泳沉积(EPD)用于在制备中将SiC或Si_(3)N_(4)“填充剂”和活性炭(石墨和炭黑)颗粒的混合物沉积到各种SiC或Si_(3)N_(4)零件上用于反应键合。当将颗粒混合到由90 w%丙酮+10 w%正丁胺组成的有机液体中以形成浆液时,颗粒已获得表面电荷。然后,带电粒子在电场作用下移动时会在陶瓷零件上形成“绿色”沉积物。然后干燥未加工的部分,随后使用反应结合法将其接合。在这种反应键合中,熔融的硅通过毛细作用移入接头,然后溶解碳并沉淀出更多的SiC。确定了SiC“填料”与C粉末的最佳混合比为0.64。由于选择了具有良好粒度分布的粉末,并将其与作为研究一部分而生成的批处理配方进行混合,从而使残留的未反应或“游离” Si降至最低。所得微结构的图像分析表明,可以实现低至7.0 vol%的残留“游离” Si含量。与使用常规反应键合技术制造的块状硅化(反应键合)SiC实验样品中的最低“游离” Si水平相比,其体积百分数为7%。接头在大量高温热循环(从硅熔点以下到熔点以上的循环)中保留了残留的硅。与商业反应结合SiC的比较表明,接头的大部分残留硅保留在封闭的孔隙中。这表明用这些接头制成的零件可以在很高的温度下成功使用。事实证明,EPD技术可以应用于对接,搭接和围巾式接头,包括填补待连接零件之间较大间隙或底切部分的能力。总体结果表明,EPD与反应结合相结合,应该可以制造由碳化硅或氮化硅组成的较小组件制造的大型复杂结构。

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