In-situ high temperature X-ray diffraction study of Co/SiC interface reactions

摘要

In-situ experiments on the Co/SiC interface reactionwere carried out with a high temperature X-ray diffractometercapable of measuring the X-ray diffraction pattern in 1-4s using animaging plate. The kinetic formation processes of the interfacereaction layer were measured in short-period exposure experimentswith the apparatus. The time-temperature phase diagram of Co/SiCin N2 was determined. Co2Si and CoSi were formed at the Co/SiCinterface between 921 and 1573K in N2. The formation of CoSiobeyed the parabolic rate law. The value of the activation energywas 95kJ/mol. The results of thermal expansion coefficientmeasurements suggest that when a sample is cooled to roomtemperature, compressive strain caused by CoSi occurs on SiC.