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首页> 外文期刊>Journal of Materials Science >Effect of secondary-phase segregation on the positive temperature coefficient in resistance characteristics of n-BaTiO3 ceramics
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Effect of secondary-phase segregation on the positive temperature coefficient in resistance characteristics of n-BaTiO3 ceramics

机译:二次相偏析对正温度系数n-BaTiO3陶瓷电阻特性的影响

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Modifications in the positive temperature coefficient in resistance (PTCR) of n-BaTiO3 ceramics are brought about by specific additives such as Al2O3, B2O3 or SiO2, leading to the segregation of secondary phases such as BaAl6TiO12, BaB6TiO12 or BaTiSi3O9 at the grain boundaries. Segregation of barium aluminotitanates resulted in broad PTCR curves, whereas B2O3 addition gave rise to steeper jumps and SiO2 addition did not result in much broadening compared with donor-only doped samples. Microstructural studies clearly show the formation of a structurally coherent epitaxial second phase layer of barium aluminotitanate surrounding the BaTiO3 grains. Electron paramagnetic resonance investigations indicated barium vacancies, V-Ba, as the major electron trap centres which are activated across the tetragonal-to-cubic phase transition according to the process V-Ba(X) + e' reversible arrow V-Ba'. The grain size dependence of the intensity of the V-Ba' signal indicated the concentration of these trap centers in the grain-boundary layer (GBL) reg ions. Furth er, the charge occupancy of these centres is modified by the secondary phases formed through grain-boundary segregation layers. BaAl6TiO12 gave rise to Al-O- hole centres whereas no paramagnetic centres corresponding to boron could be detected on B2O3 addition. Such secondary phases, forming epitaxial layers over the BaTiO3 grains, modify the GEL region, rich in electron traps, surrounding the grain core. The complex impedance ana lyses support this three-layer structure, showing the corresponding contributions to the total resistance which can be assigned as R-g, R-gb and R-secondary (phase). The epitaxial second phase layers bring about inhomogeneity in the spatial distribution of acceptor states between the grain boundary and the grain bulk resulting in extended diffuse phase transition characteristics for the GEL regions in n-BaTiO3 ceramics. This can cause the GBL regions to have different transition temperatures from the grain bulk and a spread in energy levels of the associated GEL trap states, thus modifying the PTCR curves. An attempt has been made to explain the results based on the vibronic interactions applied to the mid-band-gap states in n-BaTiO3. (C) 1998 Kluwer Academic Publishers. [References: 80]
机译:n-BaTiO3陶瓷的正温度系数电阻(PTCR)的变化是由诸如Al2O3,B2O3或SiO2之类的特定添加剂引起的,导致诸如BaAl6TiO12,BaB6TiO12或BaTiSi3O9的第二相在晶界偏析。与仅施主掺杂的样品相比,铝钛酸钡的偏析导致宽的PTCR曲线,而B2O3的添加导致陡峭的跃迁,而SiO2的添加则没有导致很大的展宽。微观结构研究清楚地表明,包围着BaTiO3晶粒的铝酸钛酸钡的结构上紧密相连的外延第二相层的形成。电子顺磁共振研究表明钡空位V-Ba是主要的电子陷阱中心,根据过程V-Ba(X)+ e'可逆箭头V-Ba',其在四方相到立方相变之间被激活。 V-Ba′信号强度的晶粒尺寸依赖性表明这些陷阱中心在晶粒边界层(GBL)区域中的浓度。此外,这些中心的电荷占有率通过通过晶界偏析层形成的第二相而改变。 BaAl6TiO12产生了Al-O-孔中心,而添加B2O3时未检测到对应于硼的顺磁中心。这样的第二相在BaTiO3晶粒上形成外延层,改变了围绕晶核的GEL区域,该区域富含电子陷阱。复阻抗分析支持这种三层结构,显示了对总电阻的相应贡献,可以将其分配为R-g,R-gb和R-次级(相)。外延第二相层在晶界和晶粒体积之间的受主态的空间分布上造成不均匀性,从而导致n-BaTiO3陶瓷中GEL区的扩散相变特性得到扩展。这可能导致GBL区的晶粒转变温度和相关GEL陷阱态的能级分布不同,从而改变了PTCR曲线。已尝试根据应用于n-BaTiO3中中带隙态的振动相互作用来解释结果。 (C)1998 Kluwer学术出版社。 [参考:80]

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