Finite element modeling for chemical mechanical polishing process under different back pressures

摘要

In this paper, the revolutions of wafer and pad were considered the same and the force forms including the pressure exerted on the top of wafer surface and the carrier back pressure were axisymmetric distributed, a 2D axisymmetric quasi-static model for chemical mechanical polishing process (CMP) was first established. Based on the principle of minimum total potential energy, a 2D axisymmetric quasi-static finite element model with a carrier back pressure compensation for CMP was then established. In this model, the four-layer structures including wafer carrier, carrier film, wafer and pad are involved. The effect of a given carrier back pressure on the stress components and von Mises stress on wafer surface was analyzed and the effect of different carrier back pressures on the von Mises stress and nonuniformity on wafer surface was investigated. The findings indicated that the axial stress was the dominant factor to the von Mises stress distribution on wafer surface. Because that the back pressure had the maximum affect on the axial stress and it made the axial stress increased along the -z direction. Thus, while applying a back pressure, the von Mises stress distribution increased. In addition, the changes of back pressure had the trend to be proportional to the von Mises stress variation and to be inversely proportional to the nonuniformity variation. The result showed obviously that during the CMP process, it could achieve the purpose to improve the planarization of wafer surface by compensating the different carrier back pressures.