Deep UV laser etching of GaN epilayers grown on sapphire substrate

摘要

The laser etching of GaN epilayers on sapphire substrate was carried out using a deep ultraviolet pulsed laser (157 nm wavelength, 20 ns pulse width). The quality and morphology of the etched GaN surface were evaluated by scanning electron microscopy, atomic force microscopy and scanning profilometer. Quadrate micro-hole and micro-trenches etched by the 157 nm laser exhibited clean and smooth edges, sharp side walls and very small heat affected zone (HAZ). In order to achieve controllable high-quality etching, the laser and processing parameters, such as laser repetition rate, scan speed, were systematically investigated and optimized. The mechanism analysis shows that, direct photoionization or photo-chemical reaction play predominant role within 157 nm laser etching of GaN epilayers.