Fabrication of Mo Thin Film by Hydrogen Reduction of M0O3 Powder for Back Contact Electrode of CIGS

摘要

In order to obtain a suitable back contacting electrode for Cu(InGa)Se2-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of MoO_3 powder. A MoO_2 thin film was successfully deposited on substrates by using the CVT of volatile MoO_3(OH)_2 at 550°C for 60 min in a H_2 atmosphere. The Mo thin film was obtained by reduction of MoO_2 at 650 °C in a H_2 atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately 1 Ω/sq.