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A study on the synthesis and adhesion properties of WC films with various bias voltage

机译:不同偏压下WC膜的合成及附着性能研究

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WC mono- and multilayer films were deposited onSTD61 and cemented carbide substrates by Cathodic Arc IonPlating process in various bias voltages of 0V to 200V. Chemicalcompositions and deposition rates were investigated using EnergyDispersive Spectroscopy(EDS) and Scanning ElectronMicroscopy(SEM). Microstructures of WC films were analyzed byX-ray Diffractometer(XRD). The adhesion and microhardnesswere evaluated by Rockwell-C indentation test method, Scratchtest and Microknoop hardness test. The films were formed in amixture of #alpha#-W_2C(hexagonal structure) and #beta#-WC(B1 NaCl structure) phase and the preferential orientation of#beta#-WC have been changed from [311] to [220] withincreasing bias voltage. The microhardness of the deposited WCfilms on cemented carbide were evaluated up to Hk3OOO and WCmultilayer films exhibited good adhesion in Rockwell-Cindentation test and Scratch test.
机译:在0V至200V的各种偏置电压下,通过阴极电弧离子镀工艺将WC单层和多层膜沉积在STD61和硬质合金衬底上。化学组成和沉积速率使用能量分散光谱法(EDS)和扫描电子显微镜(SEM)进行了研究。用X射线衍射仪(XRD)分析了WC薄膜的微观结构。通过Rockwell-C压痕测试方法,Scratchtest和Microknoop硬度测试评价粘附性和显微硬度。薄膜是在#alpha#-W_2C(六方结构)和#beta#-WC(B1 NaCl结构)相的混合物中形成的,#beta#-WC的优先取向从[311]变为[220]偏压。评估了硬质合金上沉积的WC膜的显微硬度,直至Hk3OOO,并且WC多层膜在Rockwell-Cindentation试验和Scratch试验中表现出良好的附着力。

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