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Micromechanical Analysis of the Effect of Residual Stress on the Nanoindentation Curve

机译:残余应力对纳米压痕曲线影响的微力学分析

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摘要

A new model is presented for measuring equi-biaxial stress on thin-film using nanoindentation. The model was focused on the analysis of a depth-shift in the nanoindentation curve by stress effect. A load-controlled relaxation of the shifted indentation depth was chosen to avoid the variation of the contact area occurred in a depth-controlled relaxation. Nanoindentation experiments on (100) W single crystal at artificial equi-biaxial stress states verified that the proposed load-controlled relaxation model is capable of analyzing the residual stress within the standard deviation of +-35.9 MPa.
机译:提出了一种新的模型,用于使用纳米压痕法测量薄膜上的等双轴应力。该模型专注于通过应力效应对纳米压痕曲线中的深度偏移进行分析。选择位移压入深度的负载控制松弛,以避免在深度控制松弛中发生接触面积的变化。在人工等双轴应力状态下对(100)W单晶进行的纳米压痕实验证明,所提出的载荷控制松弛模型能够分析标准偏差为+ -35.9 MPa内的残余应力。

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