Implementation of a system for metal contamination control based on classification criteria

摘要

Recent years have seen a diversification of materials that are used in micro-electronic device fabrication. Initially, the materials were limited to silicon, silicon oxide and silicon nitride. For metallization, aluminum was used. Metal silicides were introduced to lower contact resistance. Later, TiN barriers and W plugs were used, followed by copper metallization and 1OW-K dielectrics. Currently the very heart of the memory cell and the transistor are being replaced by metallic oxides and metal gate electrodes.