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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Interdiffusion of Two L10 Phases without Long-Range Order Decrease: Experiments and Molecular Dynamics Simulations
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Interdiffusion of Two L10 Phases without Long-Range Order Decrease: Experiments and Molecular Dynamics Simulations

机译:两个L10相的相互扩散而没有长程降序:实验和分子动力学模拟

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The Llo ordered MPt(OOl) thin films (M = Fe or Co) are very interesting for perpendicular recording due to their magnetic anisotropy and magneto-optical behaviours. Epitaxial Llo-ordered NiPt(OOl) / FePt(OOl) bi-layers were co-deposited on MgO(lOO) substrates by MBE. The Llo order parameter is high with the concentration modulation along the growth direction. Some FeNiPt2(001) thin films were obtained by interdiffusion of the bi-layers. The long-range-order parameter is conserved after interdiffusion (S = 0.75 ± 0.06), which can be explained by different mechanisms: a second-neighbour jump, a six-jump cycle, an anti-structural bridge mechanism or an antisite-pair elimination and creation mechanism, a double vacancy or a triple defect diffusion mechanism. Quenched molecular dynamics calculations in the frame of the second moment approximation of the tight binding method have been performed to obtain the energetic paths of the different mechanisms. The second-neighbour vacancy jump, the simultaneous jumps of bivacancies and the triple defect mechanisms can be ruled out for energetic reasons.
机译:Llo有序的MPt(001)薄膜(M = Fe或Co)对于垂直记录非常有趣,因为它们的磁各向异性和磁光特性。通过MBE将外延Llo有序的NiPt(OOl)/ FePt(OOl)双层共沉积在MgO(100)衬底上。 Llo阶参数在沿生长方向的浓度调制下较高。通过双层相互扩散获得了一些FeNiPt2(001)薄膜。相互扩散后,远程参数是守恒的(S = 0.75±0.06),这可以通过不同的机制来解释:第二邻居跳跃,六跳循环,抗结构桥机制或反位点对消除和创造机制,双空位或三重缺陷扩散机制。在紧密结合方法的第二矩近似框架内进行了淬灭的分子动力学计算,以获得不同机理的能量路径。出于精力充沛的原因,可以排除第二个邻居的空缺跳跃,双空位同时跳跃和三重缺陷机制。

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