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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >In Situ Particle Removal Studies using an Optical Particle
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In Situ Particle Removal Studies using an Optical Particle

机译:使用光学粒子的原位粒子去除研究

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The removal of particles is considered to be a three-step process (see Figure 1). Physical and chemical parameters, such as temperature, viscosity, pH, and presence of surfactants can impact each step differently The first step (Ea) is the detachment of the particle from the surface, which brings the particle in the boundary layer. The Boundary layer , Bulk liquid second step (kb) is the diffusion of the particle through the boundary layer into the bulk of the process liquids. If this does not occur before the wafer is dried, the particle will redeposit on the wafer surface. Finally, the particle has to be carried away from the wafer environment (&c) by filtration or draining of the contaminated process Silicon wafer liquid.
机译:去除颗粒被认为是一个三步过程(见图1)。物理和化学参数,例如温度,粘度,pH值和表面活性剂的存在,会对每个步骤产生不同的影响。第一步(Ea)是颗粒从表面脱离,这使颗粒进入边界层。边界层,散装液体的第二步(kb)是粒子通过边界层扩散到大部分处理液中。如果在干燥晶片之前没有发生这种情况,则颗粒将重新沉积在晶片表面上。最后,必须通过过滤或排放受污染的加工硅晶片液体,将颗粒从晶片环境(&c)带走。

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